AM2317P these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units t <= 5 sec 250 steady-state 285 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r t hja v ds (v) r ds(on) ( ) i d (a) 0.30 @ v gs = -10 v -1.0 0.50 @ v gs = -4.5v -0.9 -30 product summary symbol maximum units v ds -30 v gs 20 t a =25 o c 0.9 t a =70 o c 0.75 i dm 10 i s 0.4 a t a =25 o c 0.5 t a =70 o c 0.42 t j , t stg -55 to 150 o c drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage d s g product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = -250 ua -30 v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -10 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.80 -1.7 -2.6 v on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -2 a v gs = -10 v, i d = -1.0 a 0.25 0.30 v gs = -4.5 v, i d = -0.9 a t j = 55 o c 0.53 0.66 v gs = -4.5 v, i d = -0.9 a 0.45 0.50 forward tranconductance a g fs v ds = -5 v, i d = -1.1 a 2 s diode forward voltage v sd i s = -0.4 a, v gs = 0 v -0.70 -1.2 v total gate charge q g 2.0 3.0 gate-source charge q gs 0.5 gate-drain charge q gd 1.1 turn-on delay time t d(on) 8 16 rise time t r 16 32 turn-off delay time t d(off) 36 93 fall-time t f 33 94 v ds = -10 v, v gs = -5 v, i d = -0.9 a specifications (t a = 25 o c unless otherwise noted) switch off characteristics test conditions zero gate voltage drain current i dss a symbol parameter limits nc v ds = -10 v, i d = -0.9 a, r g = 50 , v gen = -10 v switch on characteristics unit switching drain-source on-resistance a r ds(on) ns dynamic b AM2317P product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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